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LTC5530 Precision 300MHz to 7GHz RF Detector with Shutdown and Gain Adjustment
FEATURES
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DESCRIPTIO
Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 7GHz* Wide Input Power Range: -32dBm to 10dBm Buffered Detector Output with External Gain Control Low Starting Voltage: 120mV 35mV for Gain = 2X Wide VCC Range of 2.7V to 6V Low Operating Current: 500A Low Shutdown Current: <2A Available in a Low Profile (1mm) SOT-23 Package
The LTC(R)5530 is an RF power detector for RF applications operating in the 300MHz to 7GHz range. A temperature compensated Schottky diode peak detector and buffer amplifier are combined in a small ThinSOTTM package. The supply voltage range is optimized for operation from a single lithium-ion cell or 3xNiMH. The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is buffered and supplied to the VOUT pin. The output buffer gain is set via external resistors. A power saving shutdown mode reduces current to less than 2A. The LTC5530 operates with input power levels from -32dBm to 10dBm.
, LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation. *Higher frequency operation is achievable with reduced performance. Consult factory for more information.
APPLICATIO S
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802.11a, 802.11b, 802.11g, 802.15, 802.16 Multimode Mobile Phone Products Optical Data Links Wireless Data Modems Wireless and Cable Infrastructure RF Power Alarm Envelope Detector
TYPICAL APPLICATIO
Output Voltage vs RF Input Power
3600
300MHz to 7GHz RF Power Detector
33pF RF INPUT 1 LTC5530 VCC 6 RFIN 100pF 2 GND VOUT 5 RA SHDN VM
5530 TA01
VOUT OUTPUT VOLTAGE (mV)
VCC = 3.6V 3200 TA = 25C GAIN = 2 2800 2400 2000 1600 1200 800 400
VCC 0.1F
DISABLE ENABLE
3
4 RB
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
U
300MHz 1000MHz 2000MHz 3000MHz 4000MHz 5000MHz 6000MHz 7000MHz 4 8
5530 TA02
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U
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1
LTC5530
ABSOLUTE
(Note 1)
AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
TOP VIEW RFIN 1 GND 2 SHDN 3 6 VCC 5 VOUT 4 VM
VCC, VOUT, SHDN, VM ...................................... -0.3V to 6.5V RFIN Voltage ......................................(VCC 1.5V) to 7V RFIN Power (RMS) .............................................. 12dBm IVOUT ...................................................................... 5mA Operating Temperature Range (Note 2) .. - 40C to 85C Maximum Junction Temperature ......................... 125C Storage Temperature Range ................ - 65C to 150C Lead Temperature (Soldering, 10 sec).................. 300C
ORDER PART NUMBER LTC5530ES6 S6 PART MARKING LBDX
S6 PACKAGE 6-LEAD PLASTIC TSOT-23
TJMAX = 125C, JA = 250C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off, RA = RB = 1k, SHDN = HI unless otherwise noted.
PARAMETER VCC Operating Voltage IVCC Operating Current IVCC Shutdown Current VOUT (No RF Input) VOUT Output Current VOUT Enable Time VOUT Bandwidth VOUT Load Capacitance VOUT Slew Rate VOUT Noise VM Voltage Range VM Input Current SHDN Voltage LO, Chip Disabled SHDN Voltage HI, Chip Enabled SHDN Input Current RFIN Input Frequency Range RFIN Input Power Range RFIN AC Input Resistance RFIN Input Shunt Capacitance VCC = 2.7V to 6V VCC = 2.7V to 6V SHDN = 3.6V (Note 8) RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V F = 1000MHz, Pin = -25dBm F = 1000MHz, Pin = -25dBm IVOUT = 0mA SHDN = LO RLOAD = 2k SHDN = LO VOUT = 1.75V, VCC = 2.7V, VOUT < 10mV SHDN = LO to HI, CLOAD = 33pF, RLOAD = 2k CLOAD = 33pF, RLOAD = 2k (Note 4) (Notes 6, 7) VRFIN = 1V Step, CLOAD = 33pF, RLOAD = 2k (Note 3) VCC = 3V, Noise BW = 1.5MHz, 50 RF Input Termination
q q q q q q
ELECTRICAL CHARACTERISTICS
CONDITIONS
MIN
q q q q q q
TYP 0.5 0.01
MAX 6 0.7 2 155
UNITS V mA A mV mV mA s MHz pF V/s mVP-P
2.7
85 2
100 to 140 1 4 8 2
20 33
3 1 0 -0.5 1.4 22 300 to 7000 -32 to 10 220 0.65 36 VCC - 1.8V 0.5 0.35
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: The rise time at VOUT is measured between 1.3V and 2.3V. Note 4: Bandwidth is calculated based on the 10% to 90% rise time
equation: BW = 0.35/rise time. Note 5: RF performance is tested at 1800MHz Note 6: Guaranteed by design. Note 7: Capacitive loading greater than this value may result in circuit instability. Note 8: Higher frequency operation is achievable with reduced performance. Consult factory for more information.
5530f
2
U
V A V V A MHz dBm pF
W
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U
WW
W
LTC5530 TYPICAL PERFOR A CE CHARACTERISTICS
Output Voltage vs Supply Voltage (RF Input Signal Off)
130 GAIN = 2 TA = 85C 500
VOUT OUTPUT VOLTAGE (mV)
SUPPLY CURRENT (A)
125
480
VOUT OUTPUT VOLTAGE (mV)
120
TA = 25C
115
TA = -40C
110 2.5
3.0
5.0 5.5 SUPPLY VOLTAGE VCC (V)
3.5
4.0
4.5
Typical Detector Characteristics, 300MHz
3600 VCC = 3.6V 3200 GAIN =2 VOUT OUTPUT VOLTAGE (mV) 3600 TA = -40C
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 1600 1200 800 400
TA = 25C
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
Typical Detector Characteristics, 3000MHz
3600 VCC = 3.6V 3200 GAIN = 2 3600
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 1600 1200 800 400
TA = -40C
2800 2400 2000 1600 1200 800 400 TA = 85C TA = 25C TA = -40C
VOUT OUTPUT VOLTAGE (mV)
TA = 25C
TA = 85C
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
UW
5530 G01
Supply Current vs Supply Voltage (RF Input Signal Off)
GAIN = 2 TA = -40C
VOUT vs RF Input Power and VCC 1000MHz
5600 4800 4000 3200 2400 1600 800 VCC = 6V VCC = 5V VCC = 4V VCC = 3V -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 8 12
5530 G03
TA = 25C GAIN = 2
460 TA = 25C 440 TA = 85C
6.0
420 2.5
0
3.0 5.0 5.5 SUPPLY VOLTAGE VCC (V) 3.5 4.0 4.5 6.0
5530 G02
Typical Detector Characteristics, 1000MHz
VCC = 3.6V 3200 GAIN =2 2800 2400 2000 1600 1200 800 400 TA = 85C TA = 25C TA = -40C 3600
Typical Detector Characteristics, 2000MHz
VCC = 3.6V 3200 GAIN = 2 2800 2400 2000 1600 1200 800 400 TA = 85C TA = -40C
TA = 25C
TA = 85C
4
8
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
4
8
0 -32 -28 -24 -20 -16 -12 -8 -4
0
4
8
RF INPUT POWER (dBm)
5530 G05 5530 G06
5530 G04
Typical Detector Characteristics, 4000MHz
VCC = 3.6V 3200 GAIN = 2 3600
Typical Detector Characteristics, 5000MHz
VCC = 3.6V 3200 GAIN = 2 2800 2400 2000 1600 1200 800 TA = 85C 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) TA = 25C TA = -40C
4
8
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
4
8
4
8
5530 G07
5530 G08
5530 G09
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3
LTC5530 TYPICAL PERFOR A CE CHARACTERISTICS
Typical Detector Characteristics, 6000MHz
3600 VCC = 3.6V 3200 GAIN = 2 3600
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 1600 1200 800 400
VOUT OUTPUT VOLTAGE (mV)
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
Typical Detector Characteristics, 300MHz
3600 VCC = 3.6V 3200 GAIN = 4 3600 TA = -40C TA = 25C
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 1600 1200 800 400 0 -32 -28 -24 -20 -16 -12 -8 -4 RF INPUT POWER (dBm) 0 4 TA = 85C
VOUT OUTPUT VOLTAGE (mV)
4
UW
Typical Detector Characteristics, 7000MHz
VCC = 3.6V 3200 GAIN = 2
TA = -40C
2800 2400 2000 1600 1200 800 400
TA = -40C
TA = 25C
TA = 25C
TA = 85C
TA = 85C
4
8
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
4
8
5530 G10
5530 G11
Typical Detector Characteristics, 1000MHz
VCC = 3.6V 3200 GAIN = 4 2800 2400 2000 1600 1200 800 400 TA = 85C TA = 25C TA = -40C
0 -32 -28 -24 -20 -16 -12 -8 -4 RF INPUT POWER (dBm)
0
4
5530 G12
5530 G13
5530f
LTC5530 TYPICAL PERFOR A CE CHARACTERISTICS
VOUT Slope vs RF Input Power 300MHz
1000 VCC = 3.6V GAIN = 2 1000
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
100
TA = -40C 10 TA = 85C
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5530 G14
VOUT Slope vs RF Input Power 3000MHz
1000 VCC = 3.6V GAIN = 2 1000
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
100
TA = -40C 10 TA = 85C
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5530 G17
VOUT Slope vs RF Input Power 6000MHz
1000 VCC = 3.6V GAIN = 2 1000
VOUT SLOPE (mV/dB)
100 TA = -40C 10 TA = 85C
VOUT SLOPE (mV/dB)
1 -30 -25
UW
VOUT Slope vs RF Input Power 1000MHz
VCC = 3.6V GAIN = 2 1000
VOUT Slope vs RF Input Power 2000MHz
VCC = 3.6V GAIN = 2
100
100
TA = -40C 10 TA = 85C
TA = -40C 10 TA = 85C
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5530 G15
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5530 G16
VOUT Slope vs RF Input Power 4000MHz
VCC = 3.6V GAIN = 2 1000
VOUT Slope vs RF Input Power 5000MHz
VCC = 3.6V GAIN = 2
100
100
TA = -40C 10 TA = 85C
TA = -40C 10 TA = 85C
TA = 25C 1 -30 -25 -20 -15 -10 -5 0 RF INPUT POWER (dBm) 5
5530 G18
TA = 25C 1 -30 -25 -20 -15 -10 -5 0 RF INPUT POWER (dBm) 5
5530 G19
VOUT Slope vs RF Input Power 7000MHz
VCC = 3.6V GAIN = 2
100
10
TA = -40C TA = 85C TA = 25C
TA = 25C
-20 -15 -10 -5 0 RF INPUT POWER (dBm)
5
5530 G20
1 -30 -25 -20 -15 -10 -5 0 RF INPUT POWER (dBm)
5
5530 G21
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LTC5530 TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25C)
FREQUENCY (GHz) 0.30 0.50 0.70 0.90 1.10 1.30 1.50 1.70 1.90 2.10 2.30 2.50 2.70 2.90 3.10 3.30 3.50 3.70 3.90 4.10 4.30 4.50 4.70 4.90 5.10 5.30 5.50 5.70 5.90 6.10 6.30 6.50 6.70 6.90 7.00 RESISTANCE () 290.45 234.41 178.25 137.31 109.17 86.30 68.65 57.48 49.79 43.56 38.67 34.82 31.68 29.13 27.17 25.73 24.56 23.18 22.31 20.73 19.88 19.40 19.05 19.08 19.55 20.85 21.94 20.60 19.29 18.69 18.53 18.74 19.79 19.75 19.99 REACTANCE () -136.22 -162.54 -170.53 -159.89 -147.57 -136.18 -121.74 -107.60 - 96.72 - 86.70 -77.91 -70.13 - 62.86 - 56.01 - 49.83 - 44.24 - 39.74 - 35.35 - 30.62 -26.88 -22.31 -18.23 -14.25 -10.21 - 6.30 - 2.84 -1.49 - 0.07 2.99 6.61 10.39 14.35 17.91 20.77 22.47
5530 TA03
6
UW
S11 Forward Reflection Impedance
0.3000GHz-7.000GHz
5508 TA03
5530f
LTC5530 TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = -25dBm, VCC = 3.6V, TA = 25C)
FREQUENCY (GHz) 0.30 0.50 0.70 0.90 1.10 1.30 1.50 1.70 1.90 2.10 2.30 2.50 2.70 2.90 3.10 3.30 3.50 3.70 3.90 4.10 4.30 4.50 4.70 4.90 5.10 5.30 5.50 5.70 5.90 6.10 6.30 6.50 6.70 6.90 7.00 RESISTANCE () 216.45 190.63 161.98 133.17 113.08 94.55 75.33 63.52 55.19 48.64 43.73 39.71 36.47 33.69 31.61 29.78 28.27 26.63 26.12 24.20 23.28 22.60 22.21 22.15 22.61 23.90 24.97 23.51 22.25 21.57 21.43 21.69 22.68 22.81 23.07 REACTANCE () -76.47 -98.28 -112.03 -111.53 -109.05 -107.08 - 98.50 - 88.19 - 80.05 -72.23 - 64.81 - 58.31 - 52.27 - 46.77 - 41.25 -36.61
5530 TA04
UW
S11 Forward Reflection Impedance
-32.39 -28.12 -23.97 -20.75 -16.69 -12.77 - 9.08 -5.24 -1.58 1.53 2.62 4.00 6.94 10.62 14.02 17.77 21.24 24.21 25.56
0.3000GHz-7.000GHz
5508 TA04
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LTC5530
PI FU CTIO S
RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. The frequency range is 300MHz to 7GHz. This pin has an internal 500 termination, an internal Schottky diode detector and a peak detector capacitor. GND (Pin 2): Ground. SHDN (Pin 3): Shutdown Input. A logic low on the SHDN pin places the part in shutdown mode. A logic high enables the part. SHDN has an internal 160k pulldown resistor to ensure that the part is in shutdown when no input is applied. In shutdown VOUT is connected to ground via a 280 resistor. VM (Pin 4): Negative Input to Buffer Amplifier. VOUT (Pin 5): Detector Output. VCC (Pin 6): Power Supply Voltage, 2.7V to 6V. VCC should be bypassed appropriately with ceramic capacitors.
BLOCK DIAGRA
RFSOURCE
RFIN
1
GND 2
8
W
U
U
U
VCC 6
BIAS 500
SHUTDOWN SD
+
500 BUFFER 5 VOUT
-
31k 25pF 24k
+
RF DET 180 SD SD 40k 100
4
VM
-
50A
50A 160k
3 SHDN
5530 BD
5530f
LTC5530
APPLICATIO S I FOR ATIO
Operation The LTC5530 RF detector integrates several functions to provide RF power detection over frequencies ranging from 300MHz to 7GHz. These functions include an internal frequency compensated buffer amplifier, an RF Schottky diode peak detector and level shift amplifier to convert the RF input signal to DC and a delay circuit to avoid voltage transients at VOUT when powering up. The LTC5530 has both shutdown and gain setting capabilities. Buffer Amplifier The output buffer amplifier is capable of supplying typically 4mA into a load. The negative terminal VM is brought out to a pin for gain selection. External resistors connected between VOUT and VM (RA) and VM to ground (RB) will set the amplifier gain. RF Detector The internal RF Schottky diode peak detector and level shift amplifier converts the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. The Schottky diode is biased at about 55A and drives a 25pF internal peak detector capacitor. Shutdown The part is in shutdown mode when SHDN is low. The supply current is reduced to < 2A and VOUT is shorted to ground via a 280 resistor. When SHDN is asserted high, the part is enabled after about 8s.
GAIN = 1 +
RA RB
The amplifier is unity gain stable; however a minimum gain of two is recommended to improve low output voltage accuracy. The amplifier bandwidth is 2MHz for a gain of 2. For increased gain applications, the bandwidth is reduced according to the formula:
RFIN
C4 39pF 1 R1 (OPT) R2 22k 2 3
VCC SHDN
U
BANDWIDTH = 4MHz RB = 4MHz * (GAIN) (RA + RB )
A capacitor can be placed across the feedback resistor RA to shape the frequency response. In addition the amplifier can be used as a comparator. VM can be connected to a reference voltage. When the internal detector voltage (which is connected to the positive input of the buffer amplifier) exceeds the external voltage of VM, VOUT will switch high.
Demo Board Schematic
VCC 2.7V TO 6V LTC5530ES6 RFIN VCC 6 5 4 R3 10k R4 10k
5530 DB
W
U
U
C1 0.1F C2 100pF VOUT C3 (OPT)
GND VOUT SHDN VM
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LTC5530
APPLICATIO S I FOR ATIO
Applications The LTC5530 can be used as a self-standing signal strength measuring receiver for a wide range of input signals from -32dBm to 10dBm for frequencies from 300MHz to 7GHz. Operation at higher frequencies is achievable. Consult factory for more information. The LTC5530 can be used as a demodulator for AM and ASK modulated signals with data rates up to 2MHz. Depending on specific application needs, the RSSI output can be split between two branches, providing AC-coupled
LTC5530ES6 1 2 3 DISABLE ENABLE RFIN VCC 6 5 4 R2
GND VOUT SHDN VM
Figure 1. Mobile Phone Tx Power Control Application with a Capacitive Tap
10
U
data (or audio) output and DC-coupled RSSI output for signal strength measurements and AGC. The LTC5530 can be used for RF power detection and control. Figure 1 is an example of transmitter power control, using the LTC5530 with a capacitive tap to the power amplifier. A 0.5pF capacitor (C1) followed by a 200 resistor (R1) forms a coupling circuit with about 20dB loss at 900MHz referenced to the LTC5530 RF input pin. In the actual product implementation, component values for the capacitive tap may be different depending on parts placement, PCB parasitics and parameters of the antenna.
0.1F Li-Ion Tx PA MODULE CELL BAND DIPLEXER R1 200 1% C1 0.5pF 0.05pF PCS BAND R3 MOBILE PHONE DSP VPC BSE
5530 F01
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LTC5530
PACKAGE DESCRIPTIO U
S6 Package 6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
0.62 MAX 0.95 REF 2.90 BSC (NOTE 4) 1.22 REF 1.4 MIN 2.80 BSC 1.50 - 1.75 (NOTE 4) PIN ONE ID 0.95 BSC 0.30 - 0.45 6 PLCS (NOTE 3) 0.80 - 0.90 0.20 BSC 1.00 MAX DATUM `A' 0.01 - 0.10 0.09 - 0.20 (NOTE 3) 1.90 BSC
S6 TSOT-23 0302
3.85 MAX 2.62 REF
RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR
0.30 - 0.50 REF NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193
5530f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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LTC5530
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5530f
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Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 q FAX: (408) 434-0507
q
LT/TP 0304 1K * PRINTED IN USA
www.linear.com
(c) LINEAR TECHNOLOGY CORPORATION 2004

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